H11F3M - OPTO COUPLER(FET) DIP6

Art.Nr.: H11F3M

DESCRIPTION

The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free
control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages.

FEATURES

As a remote variable resistor

• ≤ 100R to ≥ 300 MR
• ≥ 99.9% linearity
• ≤ 15 pF shunt capacitance
• ≥ 100 GR I/O isolation resistance

As an analog switch
• Extremely low offset voltage
• 60 Vpk-pk signal capability
• No charge injection or latch-up
• ton, toff ≤ 15 µS
• UL recognized (File #E90700)
• VDE recognized (File #E94766)
• Ordering option ‘300’
(e.g. H11F1.300)

APPLICATIONS

As a variable resistor •
• Isolated variable attenuator
• Automatic gain control
• Active filter fine tuning/band switching
As an analog switch •
• Isolated sample and hold circuit
• Multiplexed, optically isolated A/D conversion