IHW20N120R2 - Transistor IGBT 1200V 20A ( H20R1202 ) TO247

Reverse Conducting IGBT with monolithic body diode

Features:
• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• TrenchStop and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• technology offers easy parallel capability due to
positive temperature coefficient in V CE(sat)
• Low EMI
• Qualified according to JEDEC 1 for target applications
• Pb-free lead plating; RoHS compliant 

Applications:
• Inductive Cooking
• Soft Applications