STP10NK60ZFP - Transistor Mosfet N-Kanal + Z-Diode 600V 10A 35W 0,75R TO220-ISO

• Extremely high dv/dt capability
• 100% avalanche tested
• Gate charge minimized
• Zener-protected

Applications
• Switching applications

Description
These devices are N-Kanal Zener-protected
Power MOSFET developed using
STMicroelectronics' SuperMESH• technology,
achieved through optimization of ST's well-
established strip-based PowerMESH• layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.