H11D1 - Koppler 1-kanalig DIP8

DESCRIPTION
The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting
diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.

FEATURES
• High Voltage
- H11D1, H11D2, BVCER = 300 V
- H11D3, H11D4, BVCER = 200 V
• High isolation voltage
- 5300 VAC RMS - 1 minute
- 7500 VAC PEAK - 1 minute
• Underwriters Laboratory (UL) recognized File# E90700