AOS218/247 - Transistor pad ceramic LxWxT=25 x 21 x 3mm for TO218/247

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Products description

Products description

Ceramics aluminium oxide pads have better electrical and thermal parameters than mica or silicon pads.
Thermal conductance: 25 W/mK
Electric insulation: 10 kV/mm
Volume resistivity: 1000 000 000 000 000 Ohm/cm

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AOS220 - Transistor pad ceramic LxWxT=18 x 12 x 1.5mm for TO220

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AOS218/247 - Transistor pad ceramic LxWxT=25 x 21 x 3mm for TO218/247

1,19 EUR

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