AOS3 - Transistor pad ceramic 2.9mm 40.6 x 26,3 TO3

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Products description

Ceramics aluminium oxide pads have better electrical and thermal parameters than mica or silicon pads.

Thermal conductance: 25 W/mK

Electric insulation: 10 kV/mm

Volume resistivity: 1000 000 000 000 000 Ohm/cm

Print datasheet

AOS220 - Transistor pad ceramic LxWxT=18 x 12 x 1.5mm for TO220

AOS32 - Transistor pad ceramic 1.5mm 11 x 8 SOT32

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AOS3 - Transistor pad ceramic 2.9mm 40.6 x 26,3 TO3

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