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Main pageActive ComponentsDiscrete SemiconductorsIGBTModulsEUPEC/Siemens/INFINEONFZ1200R33HE3 - IHM-B Modul mit schnellem Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode
INFINEON

FZ1200R33HE3 - IHM-B Modul mit schnellem Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode

INFINEON
Product no.: FZ1200R33HE3
MPN: FZ1200R33HE3
FZ1200R33HE3 - IHM-B Modul mit schnellem Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode
FZ1200R33HE3 - IHM-B Modul mit schnellem Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode
Shipping time: 6 - 8 weeks
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1.166,20 EUR
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excl. Shipping costs
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  • Data sheet
  • Manufacturer information
Data sheet
Hersteller/Producer
Infineon Technologies AG
Am Campeon 1-15
85579 Neubiberg
Deutschland/Germany
Telefon/Phone:
+49 89 234-0
E-mail:
support@infineon.com
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FZ1200R33HE3 - IHM-B Modul mit schnellem Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode

FZ1200R33HE3 - IHM-B Modul mit schnellem Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode

1.166,20 EUR
19 % VAT incl. | » Select delivery country
excl. Shipping costs
Details
FZ900R12KF5 - Transistor IGBT 1200V 900A Siemens part no: 6SY7000-0AC84

FZ900R12KF5 - Transistor IGBT 1200V 900A Siemens part no: 6SY7000-0AC84

998,41 EUR
19 % VAT incl. | » Select delivery country
excl. Shipping costs
Details
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Darisus GmbH
Gerhart-Hauptmann-Str. 9
17159 Dargun

Phone: +49 2204 981811

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