High-Power NPN Silicon Transistor
. . . designed  for  use  in  industrial−military  power  amplifier  and
switching circuit applications.
•  High Collector−Emitter Sustaining Voltage −
VCEO(sus) = 150 Vdc (Min) − 2N6341
•  High DC Current Gain −hFE = 30 − 120 @ IC = 10 Adc = 12 (Min) @ IC = 25 Adc
•  Low Collector−Emitter Saturation Voltage −VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
•  Fast Switching Times @ IC = 10 Adc  tr = 0.3 ms (Max) ts = 1.0 ms (Max) tf = 0.25 ms (Max)