DESCRIPTION
2SC1970 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications.
FEATURES
High power gain: Gpe ≥ 9.2dB @Vcc =13.5V, PO = 1W, f = 175MHz
Emitter ballasted construction, gold metallization for high reliability and good performances.
TO-220 package similarly is combinient for mounting.
APPLICATION
0.8 to 1 watts output power amplifiers and driver in VHF band mobile radio applications.