AC172 - GE-Transistor NPN 32V 10mA 200mW noice reduced TO1

Material: Germanium
Polarity: NPN
Maximum collector-base voltage (V_CB_max): 32 V
Maximum collector-emitter voltage (V_CE_max): 12 V
Maximum emitter-base voltage (V_EB_max): 10 V
Maximum collector current (I_C_max): 10 mA
Maximum power dissipation (P_tot): 200 mW
DC gain (h_FE): at least 45
Transit frequency (f_T): 1 MHz
Collector capacitance (C_c): 70 pF
Maximum junction temperature (T_j): 90 °C