AFY18C - GE-Transistor 30V 100mA 300MHz TO39

Material: Germanium PNP
Maximum collector power dissipation (P_C): 0.56 W
Maximum collector-base voltage (V_CB): 30 V
Maximum collector-emitter voltage (V_CE): 15 V
Maximum collector current (I_C): 0.1 A
Transit frequency (f_T): 300 MHz
Collector capacitance (C_C): 3 pF
DC gain (h_FE), min.: 40
Maximum junction temperature (T_j): 90 °C