2SB495 - Transistor Bipolar PNP TO1

GE-Transistor
Maximum collector power dissipation (Pc): 200mW
Maximum collector-base voltage (Ucb): 25V 
Maximum collector-emitter voltage (Uce): 18V 
Maximum emitter-base voltage (Ueb): 6V 
Maximum collector current (Ic max): 1A 
Maximum junction temperature (Tj): 85°C 
Transition frequency (ft): 400KHz 
Forward current transfer ratio (hFE), min/max: 110T
Abmessungen (BHT) 6 x 10 x 6 mm

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