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2SB495 - Transistor Bipolar PNP TO1

Product no.: 2SB495
MPN: 2SB495
2SB495 - Transistor Bipolar PNP TO1
2SB495 - Transistor Bipolar PNP TO1
Shipping time: 2 - 5 days
3,57 EUR
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  • Products description
Products description

GE-Transistor
Maximum collector power dissipation (Pc): 200mW
Maximum collector-base voltage (Ucb): 25V 
Maximum collector-emitter voltage (Uce): 18V 
Maximum emitter-base voltage (Ueb): 6V 
Maximum collector current (Ic max): 1A 
Maximum junction temperature (Tj): 85°C 
Transition frequency (ft): 400KHz 
Forward current transfer ratio (hFE), min/max: 110T
Dimensions (WHD) 0.24 x 0.39 x 0.24 inch

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